主题：夏普搞清了RRAM的机理，将在2010投产 -- 千僧

英文：

Fundamental technology of the next generation non- volatilization memory RRAM as for development sharp, high-speed entry of approximately 100 times that flash memory possible next generation non- volatilization memory “RRAM * developed the fundamental technology regarding the new high-speed rewriting system of 1” with the collaborative research of the independent administrative corporate body industrial technology research institute, * 2. This is the result of the 1st step which is directed to utilization, in the future, it continues, further research and development such as integration technology, and microprocessing technology starts aiming toward utilization. RRAM with the memory device which designates the change of electric resistance of the metal oxide film as information of memory, is expected low and from the fact that drive of the element is possible in high speed, as the next generation memory which high speed can rewrite the bulk data low by electric power consumption at voltage. But, actualization of the element where behavior of resistance change of the metal oxide film which is the basic part of RRAM is not elucidated, utilizes the merit of RRAM was difficult. This each time, this corporation, observes to the resistant component other than the resistant change part where information of the memory device of RRAM is remembered depending upon the independent administrative corporate body industrial technology research institute and collaborative research, this resistant component which has not been controlled so far, designates information as the value which differs at the time of time elimination of entry, developing “high-speed unipolar switch system”. It became possible to do the entry elimination of RRAM whose former plus and minus two power source is necessary, with single power source we succeeded in operating the memory device with simple circuit constitution. Because of this, low and simplifying the cell structure of RRAM whose high-speed rewriting is possible substantially by electric power consumption, it is possible to make cell size small. Furthermore, because the material whose consistency of general CMOS process is high is used, also diversion of the existing production line is possible. In the future, integration technology and microprocessing technology etc of the memory device, furthermore it implements the research and development which becomes steady, it starts tackling the topic solution which is directed to utilization.

汉语：

基本技术的下一代非挥发性记忆rram至于开发夏普 高速入约100倍,可能下一代闪存的非挥发存储器"rram*对于新技术开发的基本高速重写系统1"的合作研究,与独立行政法人工业技术研究院 *2. 这是由于第一步骤是针对利用,今后必须继续 进一步整合研究和开发等技术,并利用微细加工技术开始走向瞄准. rram记忆装置的指定与变更的金属氧化物薄膜电阻作为信息存储、 预计从低到驾驶的元素可能在高速度、 作为下一代的高速记忆体数据可改写为低电压的电力消费. 但是, 实现的行为因素如金属氧化物薄膜电阻变化是基本部分rram不是阐发, rram难以利用的好处. 这每一次,这个总公司 观察到西林等组成部分,而不是抗拒变化的信息存储装置rram是记住独立行政法人取决于工业技术研究院和合作研究, 这西林未获控制组件迄今 把信息价值在不同的时间内消除贸 发展"高速开关单极体制". 且可以做入销毁其前任rram正负两个电源是必要的, 单电源装置成功操作简单记忆电路宪法. 正因为如此, 低细胞结构,简化其rram高速可能大幅改写了电力消费 有可能使电池体积小. 此外,由于物质的一致性一般CMOS工艺容易发生使用 同时现有生产线转移是可能的. 在今后的微细加工技术、集成技术等的记忆装置、 此外它实现了研发成为稳、 昨天开始,有针对性地解决问题,以解决利用.

可以作为研究语言交流过程中的误差放大现象的一个有理论代表性的，实际生活中很难发生的，非常有趣的，认为制造的，典型例子。